EFFECTS OF BULK-IMPURITY AND INTERFACE-CHARGE ON THE ELECTRON MOBILITY IN MOSFETs
نویسنده
چکیده
The effects of interface and bulk-impurity charges on electron mobility in a MOSFET are compared by using Monte Carlo simulation. It has been shown that the increase in bulk-impurity concentration causes a reduction of mobility at low electric fields, in two ways: (i) an increase of Coulomb interaction produced by an increase of charges in the bulk; and (ii) the reduction of screening caused by the loss of charge in inversion layer. Except for high-doping levels, the latter is the most significant cause of mobility degradation
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تاریخ انتشار 1995